| 発表者名 |
田口 啓太 |
| 指導教員名 |
金澤 直也 准教授 |
| 発表題目(英語) |
Systematic study of anisotropic magnetoresistance on the short period helimagnets GdAlSi1-xGex |
| 要旨(英語) |
Interplay between conduction electrons and local magnetic moments has great potential to realize future spin-based memory devices. Conventionally, spintronics has focused on ferromagnets, where the up and down spin states are treated as 0 and 1, respectively, and these two states have been controlled by the direction of the applied current. However, their response is limited to the nanosecond range, and the stray magnetic field hinders high-density integration of devices.
Recently, spintronics based on collinear antiferromagnets has been intensely studied. For example, the two states are regarded as 0 and 1, and current-induced switching of the two states has already been reported. Here, a picosecond-order fast response is realized, and antiferromagnets show no stray field; they are also robust against external fields. However, available logic states are limited to two in these ferromagnets and collinear antiferromagnets.
In this study, we introduce short-period helimagnets GdAlSi as a potential platform to realize high-density memory devices, and explore the origin of anisotropic magnetoresistance (AMR) from Q-vector alignment for enhanced reading ability in helimagnetic spintronics.
At this point, we assume that this phenomenon originates from the electronic structure, which strongly affects the transport properties. Therefore, we doped Ge into GdAlSi to change the Fermi surface and increase the carrier density, in order to observe the effects on AMR, and search the origin. |
| 発表言語 |
英語 |